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ZXMN6A11DN8
Absolute maximum ratings
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current @ V GS = 10V; T amb =25°C (b)
@ V GS = 10V; T amb =70°C (b)
@ V GS = 10V; T amb =25°C (a)
Pulsed drain current (c)
Continuous source current (body diode) (b)
Pulsed source current (body diode) (c)
Power dissipation at T amb =25°C (a)(d)
Linear derating factor
Power dissipation at T amb =25°C (a)(e)
Linear derating factor
Power dissipation at T amb =25°C (b)(d)
Linear derating factor
Operating and storage temperature range
Symbol
V DSS
V GS
I D
I DM
I S
I SM
P D
P D
P D
T j , T stg
Limit
60
±20
3.2
2.6
2.5
13.7
3.1
13.7
1.25
10
1.8
14
2.1
17
-55 to +150
Unit
V
V
A
A
A
A
W
mW/°C
W
mW/°C
W
mW/°C
°C
Thermal resistance
Parameter
Symbol
Limit
Unit
Junction to
ambient (a)(d)
R JA
100
°C/W
Junction to ambient (a)(e)
Junction to ambient (b)(d)
R JA
R JA
70
60
°C/W
°C/W
NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air
conditions.
(b) For a device surface mounted on FR4 PCB measured at t
10 sec.
(c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300 s - pulse width limited by maximum junction
temperature.
(d) For a dual device with one active die.
(e) For a device with two active die running at equal power.
Issue 3 - September 2006
? Zetex Semiconductors plc 2006
2
www.zetex.com
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